REMOTE POLAR PHONON-SCATTERING IN SI INVERSION-LAYERS

被引：48

作者：

MOORE, BT

FERRY, DK

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.327988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2603 / 2605

页数：3

共 9 条

[1] HOT ELECTRON EFFECTS AND SATURATION VELOCITIES IN SILICON INVERSION LAYERS [J].

FANG, FF ;

FOWLER, AB .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (04) :1825-+

[2] HOT-ELECTRON EFFECTS IN SILICON QUANTIZED INVERSION LAYERS [J].

FERRY, DK .

PHYSICAL REVIEW B, 1976, 14 (12) :5364-5371

[3] ELECTRON-TRANSPORT AND BREAKDOWN IN SIO2 [J].

FERRY, DK .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1422-1427

[4] ELECTRON-SCATTERING IN SILICON INVERSION LAYERS BY OXIDE AND SURFACE-ROUGHNESS [J].

HARTSTEIN, A ;

NING, TH ;

FOWLER, AB .

SURFACE SCIENCE, 1976, 58 (01) :178-181

[5]

HESS K, 1979, SOLID STATE COMMUN, V30, P807, DOI 10.1016/0038-1098(79)90051-6

[6]

MAHAN GD, 1974, ELEMENTARY EXCITAT B, P93

[7] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[8]

Vogl P., 1980, Physics of Nonlinear Transport in Semiconductors. Proceedings of the NATO Advanced Study Institute on Physics of Nonlinear Electron Transport, P75

[9]

VOGL P, COMMUNICATION

← 1 →