AN OPTICALLY DELINEATED 4.2-MU-M2 SELF-ALIGNED ISOLATED-PLATE STACKED-CAPACITOR DRAM CELL

被引：8

作者：

KIMURA, SI ^{[1
]}

KAWAMOTO, Y ^{[1
]}

HASEGAWA, N ^{[1
]}

HIRAIWA, A ^{[1
]}

NAKAGOME, Y ^{[1
]}

AOKI, M ^{[1
]}

KISU, T ^{[1
]}

SUNAMI, H ^{[1
]}

ITOH, K ^{[1
]}

机构：

[1] HITACHI VLSI ENGN CORP,KODAIRA,TOKYO 187,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1988年 / 35卷 / 10期

关键词：

D O I：

10.1109/16.7358

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1591 / 1595

页数：5

共 11 条

[1]

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[3]

HASEGAWA N, 1987, 34TH SPR M JAP SOC A, P434

[4]

KAGA T, 1987, 19TH C SSDM, P15

[5]

KIMURA S, 1987, 19TH C SOL STAT DEV, P19

[6]

KOYANAGI M, 1978, IEDM, P348

[7]

Ohji Y., 1987, 25th Annual Proceedings: Reliability Physics 1987 (Cat. No.87CH2388-7), P55, DOI 10.1109/IRPS.1987.362155

[8] A CORRUGATED CAPACITOR CELL (CCC) [J].

SUNAMI, H ;

KURE, T ;

HASHIMOTO, N ;

ITOH, K ;

TOYABE, T ;

ASAI, S .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (06) :746-753

[9]

TAKEMAE Y, 1985, ISSCC, P250

[10]

TAKEUCHI K, 1987, S VLSI TECHNOL, P99

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