KINETIC ASPECTS OF SOLID-PHASE EPITAXIAL-GROWTH OF AMORPHOUS SI

被引:0
|
作者
LIAU, ZL
LAU, SS
NICOLET, MA
MAYER, JW
BLATTNER, RJ
WILLIAMS, P
EVANS, CA
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
[2] UNIV ILLINOIS,SCH CHEM SCI,URBANA,IL 61801
来源
NUCLEAR INSTRUMENTS & METHODS | 1978年 / 149卷 / 1-3期
关键词
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:623 / 627
页数:5
相关论文
共 50 条
  • [31] Stressed multidirectional solid-phase epitaxial growth of Si
    Rudawski, N. G.
    Jones, K. S.
    Morarka, S.
    Law, M. E.
    Elliman, R. G.
    JOURNAL OF APPLIED PHYSICS, 2009, 105 (08)
  • [32] Stressed solid-phase epitaxial growth of (011) Si
    N.G. Rudawski
    K.S. Jones
    R. Gwilliam
    Journal of Materials Research, 2009, 24 : 305 - 309
  • [33] Stressed solid-phase epitaxial growth of (011) Si
    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611-6400, United States
    不详
    J Mater Res, 2009, 2 (305-309):
  • [34] Stressed solid-phase epitaxial growth of (011) Si
    Rudawski, N. G.
    Jones, K. S.
    Gwilliam, R.
    JOURNAL OF MATERIALS RESEARCH, 2009, 24 (02) : 305 - 309
  • [35] CRYSTALLINE QUALITIES OF SILICON LAYERS FORMED BY SOLID-PHASE EPITAXIAL-GROWTH
    TSENG, WF
    LIAU, ZL
    LAU, SS
    NICOLET, MA
    MAYER, JW
    THIN SOLID FILMS, 1977, 46 (01) : 99 - 107
  • [36] SOLID-PHASE EPITAXIAL-GROWTH OF GERMANIUM THROUGH PALLADIUM GERMANIDE LAYERS
    MAJNI, G
    FERRARI, G
    FERRARI, R
    CANALI, C
    CATELLANI, F
    OTTAVIANI, G
    MEA, GD
    THIN SOLID FILMS, 1977, 44 (02) : 193 - 199
  • [37] LOW THERMAL BUDGET SOLID-PHASE EPITAXIAL-GROWTH OF CAF2 ON SI(111) SUBSTRATES
    SINGH, R
    THAKUR, RPS
    NELSON, AJ
    GEBHARD, SC
    SWARTZLANDER, AB
    JOURNAL OF ELECTRONIC MATERIALS, 1990, 19 (10) : 1061 - 1064
  • [38] EPITAXIAL-GROWTH AND STRUCTURAL CHARACTERIZATION OF ERBIUM SILICIDE FORMED ON (100)SI THROUGH A SOLID-PHASE REACTION
    LEE, YK
    FUJIMURA, N
    ITO, T
    ITOH, N
    JOURNAL OF CRYSTAL GROWTH, 1993, 134 (3-4) : 247 - 254
  • [39] CONTROL OF SOLID-PHASE EPITAXIAL-GROWTH IN THE PD-SI SYSTEM BY CARBON ION-IMPLANTATION
    ISHIWARA, H
    SAITOH, S
    FURUKAWA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (05) : 831 - 837
  • [40] SOLID-PHASE EPITAXIAL CRYSTALLIZATION OF AMORPHOUS-GE ON (100) SI
    TSAUR, BY
    FAN, JCC
    SALERNO, JP
    ANDERSON, CH
    GALE, RP
    DAVIS, FM
    KENNEDY, EF
    SHENG, TT
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 1947 - 1953