THERMAL CONDUCTIVITY OF SINTERED SEMICONDUCTOR ALLOYS

被引：76

作者：

PARROTT, JE

机构：

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 01期

关键词：

D O I：

10.1088/0022-3719/2/1/320

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The thermal conductivity of sintered semiconductor alloys is calculated using the Klemens-Callaway model assuming that the boundary scattering can be adequately described by a mean free path. It is shown that the relative increase in thermal resistance increases with the amount of alloy disorder scattering and should be substantial in sintered germanium silicon alloys with particle sizes of the order of one micron.

引用

页码：147 / &

共 6 条

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PARROTT, JE .

PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 81 (522) :726-&

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