BREAKDOWN IN SILICON

被引：49

作者：

SENITZKY, B

MOLL, JL

机构：

来源：

PHYSICAL REVIEW | 1958年 / 110卷 / 03期

关键词：

D O I：

10.1103/PhysRev.110.612

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：612 / 620

页数：9

共 10 条

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MCKAY, KG .

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[4] ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].

MCKAY, KG ;

MCAFEE, KB .

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[5]

MCKAY KG, COMMUNICATION

[6] VISIBLE LIGHT FROM A SILICON P-N JUNCTION [J].

NEWMAN, R .

PHYSICAL REVIEW, 1955, 100 (02) :700-703

[7] SILICON P-N-JUNCTION ALLOY DIODES [J].

PEARSON, GL ;

SAWYER, B .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1348-1351

[8]

PEARSON GL, UNPUBLISHED

[9] MICROPLASMAS IN SILICON [J].

ROSE, DJ .

PHYSICAL REVIEW, 1957, 105 (02) :413-418

[10]

UHLIR, UNPUBLISHED

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