ANALYSIS OF GAMMA-RADIATION INDUCED INSTABILITY MECHANISMS IN CMOS TRANSISTORS

被引：40
作者：
DIMITRIJEV, S
GOLUBOVIC, S
ZUPAC, D
PEJOVIC, M
STOJADINOVIC, N
机构：
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 05期
关键词：
D O I：
10.1016/0038-1101(89)90122-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：349 / 353
页数：5
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