TRAP-INDUCED PHOTOCONDUCTIVITY IN SEMI-INSULATING GAAS

被引：22

作者：

DESNICA, UV

SANTIC, B

机构：

[1] R. Bošković Institute, Zagreb

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 03期

关键词：

D O I：

10.1063/1.345697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Photoconductivity of semi-insulating gallium arsenide illuminated with monochromatic photons in the 0.7-1.8 eV range has been studied. It has been found that photoconductivity strongly depends on the occupancy of deep traps present in the material, so that the photoconductivity measured for the full trap regime is several orders of magnitude larger than one taken when the traps are empty. By selective emptying or filling of traps it was possible to identify the contribution of each particular trap to the photoconductivity enhancement in different temperature intervals.

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页码：1408 / 1411

页数：4

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