A COMPARISON OF PD SCHOTTKY CONTACTS ON INP, GAAS AND SI

被引：46
作者：
HOKELEK, E
ROBINSON, GY
机构：
来源：
SOLID-STATE ELECTRONICS | 1981年 / 24卷 / 02期
关键词：
D O I：
10.1016/0038-1101(81)90001-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：99 / 103
页数：5
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