LARGE BARKHAUSEN EFFECT OF 6.3-PERCENT SIFE SINGLE-CRYSTAL WIRE

被引：4

作者：

MOHRI, K

TAKAMIDO, H

机构：

[1] Department of Electrical Engineering, Nagoya University, Nagoya

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1990年 / 26卷 / 05期

关键词：

D O I：

10.1109/20.104524

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Sensitive and stable large Barkhausen effect was newly found for 4 - 8 % SiFe single crystal wires developed by Toyobo Co., R&D. New pulse generator elements are constituted using 6.3 % SiFe single crystal wire which has nearly zero magnetostriction (λ100). Pulse voltages are induced at a pick-up coil for applied ac field of more than about 0.2 Oe with frequencies 0.01 Hz to 10 kHz. High reliability of pulse generation characteristics was estimated against disturbance stresses for the 6.3 % SiFe single crystal wire. © 1990 IEEE

引用

页码：1783 / 1785

页数：3

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