LARGE BARKHAUSEN EFFECT OF 6.3-PERCENT SIFE SINGLE-CRYSTAL WIRE

被引:4
|
作者
MOHRI, K
TAKAMIDO, H
机构
[1] Department of Electrical Engineering, Nagoya University, Nagoya
关键词
D O I
10.1109/20.104524
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Sensitive and stable large Barkhausen effect was newly found for 4 - 8 % SiFe single crystal wires developed by Toyobo Co., R&D. New pulse generator elements are constituted using 6.3 % SiFe single crystal wire which has nearly zero magnetostriction (λ100). Pulse voltages are induced at a pick-up coil for applied ac field of more than about 0.2 Oe with frequencies 0.01 Hz to 10 kHz. High reliability of pulse generation characteristics was estimated against disturbance stresses for the 6.3 % SiFe single crystal wire. © 1990 IEEE
引用
收藏
页码:1783 / 1785
页数:3
相关论文
共 50 条