A Low-Complexity Dual-Band Model for Dual-band Power Amplifiers Based on Volterra Series
被引:1
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作者:
Zhang, Tianjing
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机构:
Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
Zhang, Tianjing
[1
]
Yu, Cuiping
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机构:
Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
Yu, Cuiping
[1
]
Liu, Yuanan
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机构:
Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
Liu, Yuanan
[1
]
Li, Shulan
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Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
Li, Shulan
[1
]
Tang, Bihua
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机构:
Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R ChinaBeijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
Tang, Bihua
[1
]
机构:
[1] Beijing Univ Posts & Telecommun, Sch Elect Engn, Beijing Key Lab Work Safety Intelligent Monitorin, POB 282, Beijing 100876, Peoples R China
来源:
PROGRESS IN ELECTROMAGNETICS RESEARCH LETTERS
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2015年
/
53卷
基金:
中国国家自然科学基金;
关键词:
D O I:
10.2528/PIERL15042704
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A novel low-complexity dual-band memory polynomial (2D-LCMP) model for linearization of dual-band power amplifiers (PAs) is proposed in this paper. The in-band intermodulation (IM) and cross-band modulation (CM) distortion terms in the prior two-dimensional models have different impacts on the model performance. Therefore, they are considered respectively in the proposed model. Some redundant distortion terms are removed away to decrease the model complexity. In addition, the nonlinearity order and memory depth are frequency dependent for each band. Experimental measurements were performed on two types of wideband PAs. The results prove the superiority of the 2D-LCMP model.