A REVIEW OF SEMICONDUCTOR PROPERTIES OF PBTE, PBSE, PBS AND PBO

被引：302
作者：
DALVEN, R
机构：
[1] Conversion Devices Laboratory, RCA Laboratories, Princeton
来源：
INFRARED PHYSICS | 1969年 / 9卷 / 04期
关键词：
D O I：
10.1016/0020-0891(69)90022-0
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
[No abstract available]
引用
收藏
页码：141 / +
页数：1
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