LUMINESCENCE AND PHOTOCHEMISTRY OF 9-NITROANTHRACENE AT 4.2-K

被引:3
|
作者
TESTA, AC
机构
关键词
D O I
10.1016/1010-6030(89)87075-3
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:309 / 318
页数:10
相关论文
共 50 条
  • [31] Molecular and electronic structures and conformational analysis of derivatives of 9-nitroanthracene, anionic σ-complexes
    Sishkin, OV
    Borulevych, OY
    Blokhin, IV
    Atroschenko, YM
    Gitis, SS
    RUSSIAN CHEMICAL BULLETIN, 1998, 47 (03) : 423 - 428
  • [32] METABOLISM OF 9-NITROANTHRACENE BY RAT-LIVER MICROSOMES - IDENTIFICATION AND MUTAGENICITY OF METABOLITES
    FU, PP
    VONTUNGELN, LS
    CHOU, MW
    CARCINOGENESIS, 1985, 6 (05) : 753 - 757
  • [33] STERIC INHIBITION OF RESONANCE .1. 9-NITROANTHRACENE AND 9,10-DINITROANTHRACENE
    TROTTER, J
    CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1959, 37 (02): : 351 - 357
  • [34] Molecular and electronic structures and conformational analysis of derivatives of 9-nitroanthracene, anionic σ-complexes
    Shishkin O.V.
    Borbulevych O.Ya.
    Blokhin I.V.
    Atroschenko Yu.M.
    Gitis S.S.
    Russian Chemical Bulletin, 1998, 47 (3) : 423 - 428
  • [35] CRYOSTAT FOR MECHANICAL TESTING OF MATERIALS AT 4.2-K
    VALSAKUMAR, MC
    KANNAN, N
    ARAVAMUDHAN, S
    RADHAKRISHNAN, TS
    TRANSACTIONS OF THE INDIAN INSTITUTE OF METALS, 1979, 32 (05): : 405 - 410
  • [36] SEMICONDUCTIVE PROPERTIES OF ORGANIC-COMPOUNDS - GAS ADSORPTION EFFECT ON 9-NITROANTHRACENE
    JAIN, KM
    GHOSH, A
    MALLIK, B
    MISRA, TN
    INDIAN JOURNAL OF PHYSICS AND PROCEEDINGS OF THE INDIAN ASSOCIATION FOR THE CULTIVATION OF SCIENCE-PART A, 1978, 52 (06): : 543 - 551
  • [37] Application of 9-nitroanthracene as a matrix for laser desorption/ionization analysis of fluorinated fullerenes
    Streletskiy, AV
    Goldt, IV
    Kuvychko, IV
    Ioffe, IN
    Sidorov, LN
    Drewello, T
    Strauss, SH
    Boltalina, OV
    RAPID COMMUNICATIONS IN MASS SPECTROMETRY, 2004, 18 (03) : 360 - 362
  • [38] CRYSTAL-STRUCTURE OF LITHIUM AT 4.2-K
    OVERHAUSER, AW
    PHYSICAL REVIEW LETTERS, 1984, 53 (01) : 64 - 65
  • [39] SUBTHRESHOLD BEHAVIOR OF SILICON MOSFETS AT 4.2-K
    KAMGAR, A
    SOLID-STATE ELECTRONICS, 1982, 25 (07) : 537 - 539
  • [40] PHONON SOFTENING IN TANTALUM BELOW 4.2-K
    SACCHETTI, F
    MOZE, O
    PETRILLO, C
    SOLID STATE COMMUNICATIONS, 1992, 81 (02) : 195 - 198