EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF TE DOPED GAAS

被引：26

作者：

HWANG, CJ

机构：

[1] Bell Telephone Laboratories Incorporated, Murray Hill

来源：

JOURNAL OF APPLIED PHYSICS | 1969年 / 40卷 / 04期

关键词：

D O I：

10.1063/1.1657885

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

[No abstract available]

引用

页码：1983 / &

共 11 条

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HWANG, CJ .

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[6] EFFECT OF HEAT TREATMENT ON PHOTOLUMINESCENCE OF ZN-DOPED GAAS [J].

HWANG, CJ .

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[7]

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[8]

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[9] PHOTOLUMINESCENCE OF CU-DOPED GALLIUM ARSENIDE [J].

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FULLER, CS .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (13) :4895-&

[10] INFRARED ABSORPTION AND ELECTRON EFFECTIVE MASS IN N-TYPE GALLIUM ARSENIDE [J].

SPITZER, WG ;

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PHYSICAL REVIEW, 1959, 114 (01) :59-63

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