THE SUB-THRESHOLD CHARACTERISTICS OF POLYSILICON THIN-FILM-TRANSISTORS

被引:14
作者
FORTUNATO, G [1 ]
MEAKIN, DB [1 ]
MIGLIORATO, P [1 ]
机构
[1] GEC RES LTD,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1988年 / 27卷 / 11期
关键词
D O I
10.1143/JJAP.27.2124
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:2124 / 2127
页数:4
相关论文
共 16 条
[1]  
BRYER NJ, 1987, P SID, V28, P109
[2]   FIELD-EFFECT IN LARGE GRAIN POLYCRYSTALLINE SILICON [J].
COLINGE, JP ;
MOREL, H ;
CHANTE, JP .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (03) :197-201
[3]   DETERMINATION OF GAP STATE DENSITY IN POLYCRYSTALLINE SILICON BY FIELD-EFFECT CONDUCTANCE [J].
FORTUNATO, G ;
MIGLIORATO, P .
APPLIED PHYSICS LETTERS, 1986, 49 (16) :1025-1027
[4]  
FORTUNATO G, IN PRESS PHILOS MA B
[5]   EFFECTS OF GRAIN-BOUNDARIES ON THE CHANNEL CONDUCTANCE OF SOI MOSFETS [J].
FOSSUM, JG ;
ORTIZCONDE, A .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (08) :933-940
[6]   ABOVE THRESHOLD CHARACTERISTICS OF AMORPHOUS-SILICON ALLOY THIN-FILM TRANSISTORS [J].
HYUN, C ;
SHUR, MS ;
HACK, M ;
YANIV, Z ;
CANNELLA, V .
APPLIED PHYSICS LETTERS, 1984, 45 (11) :1202-1203
[7]   THEORETICAL-ANALYSIS OF AMORPHOUS-SILICON FIELD-EFFECT-TRANSISTORS [J].
KISHIDA, S ;
NARUKE, Y ;
UCHIDA, Y ;
MATSUMURA, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (03) :511-517
[8]  
MALHI SDS, 1985, IEEE T ELECTRON DEVI, V32, P358
[9]   COMPLETELY INTEGRATED CONTACT-TYPE LINEAR IMAGE SENSOR [J].
MOROZUMI, S ;
KURIHARA, H ;
TAKESHITA, T ;
OKA, H ;
HASEGAWA, K .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) :1546-1550
[10]  
MOROZUMI S, 1984, 1984 SID INT S, V15, P316