LARGE-SIGNAL TEMPERATURE-DEPENDENT DC MODEL FOR HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：0

作者：

HAJJI, R ^{[1
]}

ELRABAIE, S ^{[1
]}

KOUKI, AB ^{[1
]}

GHANNOUCHI, FM ^{[1
]}

机构：

[1] FAC ELECTR ENGN,MENOUFIA 32952,EGYPT

来源：

IEE PROCEEDINGS-MICROWAVES ANTENNAS AND PROPAGATION | 1995年 / 142卷 / 05期

关键词：

BIPOLAR TRANSISTORS; HETEROJUNCTION TRANSISTORS; TRANSISTOR DC MODEL;

D O I：

10.1049/ip-map:19952113

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel temperature-dependent HBT DC model in a suitable form for implementation in nonlinear circuit simulators is presented. The proposed model is accurate in all operating regions, and its parameters can be extracted easily using suitable optimisation codes. The validity and accuracy of the proposed model are confirmed by comparison to measured DC I-V characteristics of both low-power and high-power devices over a wide temperature range.

引用

页码：417 / 419

页数：3

共 7 条

[1] DC MODELING AND CHARACTERIZATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS FOR HIGH-TEMPERATURE APPLICATIONS [J].