PLANAR 1.3 AND 1.55 MU-M INGAAS(P)/INP ELECTROABSORPTION WAVE-GUIDE MODULATORS USING OXYGEN-ION MIXING AND THE PHOTOELASTIC EFFECT

被引：6

作者：

PAPPERT, SA ^{[1
]}

XIA, W ^{[1
]}

JIANG, XS ^{[1
]}

GUAN, ZF ^{[1
]}

ZHU, B ^{[1
]}

LIU, QZ ^{[1
]}

YU, LS ^{[1
]}

CLAWSON, AR ^{[1
]}

YU, PKL ^{[1
]}

LAU, SS ^{[1
]}

机构：

[1] NCCOSC,RDT&E DIV,SAN DIEGO,CA

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 75卷 / 09期

关键词：

D O I：

10.1063/1.355978

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Efficient 1.3 and 1.55 mum InP-based electroabsorption waveguide modulators with planar device structures have been demonstrated. Elevated temperature oxygen ion implantation and/or the photoelastic effect induced by W metal stressor stripes deposited on the semiconductor surface have been used to produce these self-aligned planar guided-wave devices. The oxygen ion mixing process has been used to simultaneously achieve compositional disordering and electrical isolation of superlattice material while the photoelastic effect has been used to improve the lateral mode confinement. A 1.3 mum Franz-Keldysh modulator with a >10 dB extinction ratio at 2 V and a 1.55 mum device with a >10 dB extinction ratio at 7 V are reported. These single growth step planar processing techniques have also been used to fabricate relatively low-loss (<4 dB/cm) double heterostructure InGaAs(P)/InP single-mode optical waveguides which demonstrate their usefulness in developing InP-based photonic integrated circuits.

引用

页码：4352 / 4361

页数：10

共 49 条

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