CW OPERATION OF CORNER CAVITY SEMICONDUCTOR-LASERS

被引：4

作者：

SMITH, SD ^{[1
]}

FITZ, JL ^{[1
]}

WHISNANT, JK ^{[1
]}

机构：

[1] MARTIN MARIETTA CORP LABS,BALTIMORE,MD 21227

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 08期

关键词：

D O I：

10.1109/68.238240

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Etched facet semiconductor lasers have been fabricated and tested under CW operating conditions. The lasers consist of stripes formed by proton implantation, a total internal reflection (TIR) corner, and an output coupling facet. Devices with a variety of output coupling geometries were fabricated. Laser threshold currents and spectral characteristics were measured. Threshold current levels of devices with several different aperture sizes are compared to those of structures with standard Fabry-Perot reflectors.

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页码：876 / 879

页数：4

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