THERMALLY STIMULATED CURRENT MEASUREMENTS IN N-TYPE LEC GAP

被引：37

作者：

FABRE, E ^{[1
]}

BHARGAVA, RN ^{[1
]}

ZWICKER, WK ^{[1
]}

机构：

[1] PHILIP LABS,BRIARCLIFF MANOR,NY 10510

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 02期

关键词：

D O I：

10.1007/BF02652950

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：409 / 430

页数：22

共 35 条

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HACKETT, WH ;

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KAMMLOTT, GW ;

HASZKO, SE .

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[6] DEEP HOLE TRAPS IN N-TYPE LIQUID ENCAPSULATED CZOCHRALSKI GAP [J].

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DALY, DF ;

KNOX, WP .

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[7]

FABRE E, UNPUBLISHED RESULTS

[8] DETERMINATION OF DEEP LEVEL CENTER ENERGY AND CONCENTRATION BY THERMALLY STIMULATED CONDUCTIVITY MEASUREMENTS USING REVERSE-BIASED P-N JUNCTIONS [J].

FORBES, L ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1971, 14 (02) :182-&

[9] IDEAL GAP SURFACE-BARRIER DIODES [J].

GOLDBERG, YA ;

POSSE, EA ;

TSARENKOV, BV .

ELECTRONICS LETTERS, 1971, 7 (20) :601-+

[10]

HACKETT WH, 1970, APPL PHYS LETT, V16, P447

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