CALCULATED ROOM-TEMPERATURE THRESHOLD CURRENT DENSITIES FOR THE VISIBLE II-VI ZNCDSE/ZNSE QUANTUM-WELL DIODE-LASERS

被引：12

作者：

AGGARWAL, RL ^{[1
]}

ZAYHOWSKI, JJ ^{[1
]}

LAX, B ^{[1
]}

机构：

[1] MIT,CAMBRIDGE,MA 02139

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 23期

关键词：

D O I：

10.1063/1.109190

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature threshold current densities for the visible II-VI ZnCdSe/ZnSe semiconductor quantum-well diode lasers have been calculated using a simple model for the quantum-well gain and spontaneous radiative recombination rate. These results are compared with those for the infrared III-V GaAs/GaAlAs quantum-well lasers, calculated using the same model. By tailoring the epitaxial structure for optimum optical confinement, cw room-temperature operation of the ZnCdSe/ZnSe quantum-well lasers should be possible with threshold current densities as low as 400 A/cm 2 for a 1-mm cavity length and uncoated laser facets, assuming the problem of ohmic contacts to the epitaxial structure is resolved.

引用

页码：2899 / 2901

页数：3

共 10 条

[1]

Agrawal G., 1986, LONG WAVELENGTH SEMI

[2] OPTICAL GAIN OF CDZNSE ZNSE QUANTUM-WELL LASERS [J].