Conductivity of LaAlO3/SrTiO3 Interfaces Made by Sputter Deposition

被引：2

作者：

Dildar, I. M. ^{[1
]}

Boltje, D. ^{[1
]}

Hesselberth, M. ^{[1
]}

Xu, Q. ^{[2
]}

Zandbergen, H. ^{[2
]}

Harkema, S. ^{[3
,4
]}

Aarts, J. ^{[1
]}

机构：

[1] Leiden Univ, Kamerlingh Onnes Lab, Leiden, Netherlands

[2] Delft Univ Technol, Kavli Inst Nanosci, Natl Ctr High Resolut Microscopy, NL-2628 CJ Delft, Netherlands

[3] Univ Twente, Fac Sci & Technol, NL-7500 AE Enschede, Netherlands

[4] Univ Twente, MESA Inst Nanotechnol, NL-7500 AE Enschede, Netherlands

来源：

E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY | 2012年 / 10卷

关键词：

Scanning transmission electron microscopy; Electron gas; Sputter deposition; Heterojunctions; X-ray emission;

D O I：

10.1380/ejssnt.2012.619

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

There is much interest in interfaces between insulating oxides, such as SrTiO3 (STO) and LaAlO3 (LAO), where a two dimensional electron gas can form due to the so-called polar discontinuity. These interfaces are mostly fabricated by Pulsed Laser Deposition (PLD). We have investigated such interfaces by reactive RF sputtering in a high-pressure oxygen atmosphere. The films are smooth and crystalline. Transmission Electron Microscopy indicates that the interfaces are sharp and continuous while Electron Energy Loss Spectroscopy data indicate some slight intermixing. However, we find these interfaces to be non-conducting. It appears that the sputtered interface is not electronically reconstructed in the way reported for films grown by PLD, notwithstanding the good structural quality and composition of the films.

引用

页码：619 / 623

页数：5

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