CHARGE BUILDUP AT HIGH-DOSE AND LOW FIELDS IN SIMOX BURIED OXIDES

被引：34

作者：

BOESCH, HE ^{[1
]}

BROWN, GA ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/23.124098

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Trapped charge buildup was measured and modeled as a function of dose and applied oxide field, epsilon(omicron)-x, for a representative SIMOX (separation by implantation of oxygen) buried oxide. The dominant physical processes controlling the buildup are shown to be space-charge-driven modification of epsilon(omicron)-x and recombination of electrons with trapped holes in low-field regions of the oxide.

引用

页码：1234 / 1239

页数：6

共 17 条

[1]

BENEDETTO M, 1986, IEEE T NUCL SCI, V33, P1318

[2] CHARGE YIELD AND DOSE EFFECTS IN MOS CAPACITORS AT 80-K [J].