MOS INTEGRATED-CIRCUIT RELIABILITY

被引:16
作者
SCHNABLE, GL
SCHLEGEL, ES
EWALD, HJ
机构
关键词
D O I
10.1109/TR.1972.5216165
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:12 / &
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共 46 条
[1]   EFFECTS OF MATERIAL AND PROCESSING PARAMETERS ON DIELECTRIC STRENGTH OF THERMALLY GROWN SIO2 FILMS [J].
CHOU, NJ ;
ELDRIDGE, JM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (10) :1287-+
[2]  
CURRY JJ, 1971, 8 P ANN IEEE REL PHY, P29
[3]  
DEAL BE, 1970, NBS337 SPEC PUBL, P36
[4]  
EWALD H, 1971, RADCTR71178
[5]  
FAGGIN F, 1971, 8 P ANN IEEE REL PHY, P35
[6]  
FARINA DE, 1968, Patent No. 3395290
[7]  
FLYNN G, 1970, ELECTRON PROD, V13, P21
[8]   SURFACE-CHARGE INDUCED FAILURES OBSERVED ON MOS INTEGRATED CIRCUITS [J].
FORSYTHE, DD .
MICROELECTRONICS RELIABILITY, 1969, 8 (04) :339-&
[9]   METAL-NITRIDE-OXIDE-SILICON(MNOS) TRANSISTOR - CHARACTERISTICS AND APPLICATIONS [J].
FROHMANB.D .
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1970, 58 (08) :1207-+
[10]  
GOETZBERGER A, 1969, APPL SOL STATE SCI, P154