ASSESSMENT OF FE-DOPED SEMI-INSULATING INP CRYSTALS BY SCANNING PHOTOLUMINESCENCE MEASUREMENTS

被引：28

作者：

LONGERE, JY ^{[1
]}

SCHOHE, K ^{[1
]}

KRAWCZYK, SK ^{[1
]}

COQUILLE, R ^{[1
]}

LHARIDON, H ^{[1
]}

FAVENNEC, PN ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,LAB,OCM,TOH,F-22301 LANNION,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 02期

关键词：

D O I：

10.1063/1.346780

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature scanning photoluminescence (SPL) measurements were performed on Fe-doped semi-insulating InP wafers obtained from various suppliers. It was found that defects and inhomogeneities such as short- and long-range doping striations, dislocations, and subsurface extended defects are associated with specific "signatures" in SPL images, regardless of the origin of the samples. Because SPL measurements are fast and nondestructive, they appear to be useful for the evaluation of this material.

引用

页码：755 / 759

页数：5

共 26 条

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