共 50 条
- [2] SOME PROPERTIES OF NICKEL-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1536 - +
- [3] SOME PROPERTIES OF TITANIUM-DOPED HIGH-RESISTIVITY GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (05): : 853 - &
- [4] INJECTION BREAKDOWN IN HIGH-RESISTIVITY GALLIUM ARSENIDE DOPED WITH IRON AND CHROMIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (09): : 1440 - +
- [5] PROPERTIES OF NICKEL-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (04): : 469 - 471
- [6] INVESTIGATION OF OPTICAL ABSORPTION SPECTRA OF HIGH-RESISTIVITY GALLIUM ARSENIDE DOPED WITH IRON OR NICKEL SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (06): : 1086 - +
- [7] ELECTROABSORPTION OF NICKEL-DOPED GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 298 - 300
- [8] ELECTROABSORPTION OF NICKEL-DOPED GALLIUM ARSENIDE. Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 298 - 300
- [10] CARRIER LIFETIMES IN HIGH-RESISTIVITY IRON-DOPED GALLIUM ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 169 - +