VOLTAGE DEPENDENCE OF CAPACITANCE OF ZN-DIFFUSED GAAS DIODES

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 483 - &

[2] CAPACITANCE-VOLTAGE DEPENDENCE OF ZINC-DIFFUSED GAAS P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 119 - &

[3] BOLTAKS BI, 1964, SOVIET PHYS SOLID ST, V6, P1181

[4] EFFECT OF ARSENIC PRESSURE ON CRYSTAL EFFICIENCY FOR INJECTION LUMINESCENCE IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 335 - &

[5] TEMPERATURE DEPENDENCE OF DELAY TIME BETWEEN CURRENT PULSE AND LASER EMISSION OF GAAS LASER DIODES [J]. ELECTRONICS LETTERS, 1967, 3 (12) : 533 - &

[6] GUNNELL FA, 1960, PHYS CHEM SOLIDS, V15, P127

[7] HORAK G, UNPUBLISHED

[8] JONSCHER AK, 1960, PRINCIPLES SEMICONDU

[9] LOWEN J, 1960, J ELECTROCHEM SOC, V107, P28

[10] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &

[1] ELECTRON-HOLE AND ELECTRON-IMPURITY BAND TUNNELING IN GAAS LUMINESCENT JUNCTIONS [J]. PHYSICAL REVIEW LETTERS, 1963, 10 (11) : 483 - &

[2] CAPACITANCE-VOLTAGE DEPENDENCE OF ZINC-DIFFUSED GAAS P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1965, 8 (02) : 119 - &

[3] BOLTAKS BI, 1964, SOVIET PHYS SOLID ST, V6, P1181

[4] EFFECT OF ARSENIC PRESSURE ON CRYSTAL EFFICIENCY FOR INJECTION LUMINESCENCE IN GALLIUM ARSENIDE [J]. SOLID-STATE ELECTRONICS, 1967, 10 (04) : 335 - &

[5] TEMPERATURE DEPENDENCE OF DELAY TIME BETWEEN CURRENT PULSE AND LASER EMISSION OF GAAS LASER DIODES [J]. ELECTRONICS LETTERS, 1967, 3 (12) : 533 - &

[6] GUNNELL FA, 1960, PHYS CHEM SOLIDS, V15, P127

[7] HORAK G, UNPUBLISHED

[8] JONSCHER AK, 1960, PRINCIPLES SEMICONDU

[9] LOWEN J, 1960, J ELECTROCHEM SOC, V107, P28

[10] EFFECT OF DEEP LEVELS ON OPTICAL AND ELECTRICAL PROPERTIES OF COPPER-DOPED GAAS P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1965, 138 (5A): : 1551 - &