CARBON-DOPED ALXGA1-XAS-GAAS QUANTUM WELL LASERS

被引：42

作者：

GUIDO, LJ ^{[1
]}

JACKSON, GS ^{[1
]}

HALL, DC ^{[1
]}

PLANO, WE ^{[1
]}

HOLONYAK, N ^{[1
]}

机构：

[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 07期

关键词：

D O I：

10.1063/1.99403

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：522 / 524

页数：3

共 14 条

[1] DISORDER OF AN ALAS-GAAS SUPER-LATTICE BY SILICON IMPLANTATION [J].

COLEMAN, JJ ;

DAPKUS, PD ;

KIRKPATRICK, CG ;

CAMRAS, MD ;

HOLONYAK, N .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :904-906

[2] LOW-THRESHOLD DISORDER-DEFINED BURIED-HETEROSTRUCTURE ALXGA1-XAS-GAAS QUANTUM WELL LASERS [J].

DEPPE, DG ;

HSIEH, KC ;

HOLONYAK, N ;

BURNHAM, RD ;

THORNTON, RL .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4515-4520

[3]

DEPPE DG, 1987, APPL PHYS LETT, V50, P631

[4]

DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1

[5]

GUIDO LJ, 1987, APPL PHYS LETT, V50, P759

[6] STRIPE-GEOMETRY ALXGA1-XAS-GAAS QUANTUM-WELL LASERS VIA HYDROGENATION [J].

JACKSON, GS ;

PAN, N ;

FENG, MS ;

STILLMAN, GE ;

HOLONYAK, N ;

BURNHAM, RD .

APPLIED PHYSICS LETTERS, 1987, 51 (20) :1629-1631

[7] EFFECTS OF BE AND SI ON DISORDERING OF THE ALAS/GAAS SUPERLATTICE [J].

KAWABE, M ;

SHIMIZU, N ;

HASEGAWA, F ;

NANNICHI, Y .

APPLIED PHYSICS LETTERS, 1985, 46 (09) :849-850

[8] PROPERTIES OF HIGH-PURITY ALXGA1-XAS GROWN BY THE METAL-ORGANIC VAPOR-PHASE-EPITAXY TECHNIQUE USING METHYL PRECURSORS [J].

KUECH, TF ;

WOLFORD, DJ ;

VEUHOFF, E ;

DELINE, V ;

MOONEY, PM ;

POTEMSKI, R ;

BRADLEY, J .

JOURNAL OF APPLIED PHYSICS, 1987, 62 (02) :632-643

[9] MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS [J].

KUECH, TF ;

VEUHOFF, E .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :148-156

[10]

LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159

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