DIELECTRIC BREAKDOWN VOLTAGE CHARACTERISTICS OF EVAPORATED SILICON OXIDE FILMS

被引：0
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作者：
NISHIMUR.Y
INAGAKI, T
SASAKI, H
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来源：
ELECTRONICS & COMMUNICATIONS IN JAPAN | 1969年 / 52卷 / 03期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：116 / &
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