ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS

[1] LOW-TEMPERATURE DEPOSITION OF PYROLYTIC SIO2 FOR PASSIVATING SEMICONDUCTOR POWER DIODES [J]. THIN SOLID FILMS, 1976, 36 (02) : 479 - 482

[2] AOKI T, 1975, EL SOC EXT ABST, V75, P352

[3] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 990 - 994

[4] BARRY ML, 1970, CHEMICAL VAPOR DEPOS, P595

[5] BENZING WC, 1975, SOLID STATE TECHNOL, V18, P39

[6] BENZING WC, 1973, SOLID STATE TECHNOL, V16, P37

[7] BERMAN AH, 1976, SOLID STATE TECHNOL, V19, P29

[8] CHARACTERISTICS OF DOPED OXIDES AND THEIR USE IN SILICON DEVICE FABRICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 276 - +

[9] BURT DL, 1976, Patent No. 3934060

[10] CHRISTOU A, 1977, 15TH P ANN REL PHYS

[1] LOW-TEMPERATURE DEPOSITION OF PYROLYTIC SIO2 FOR PASSIVATING SEMICONDUCTOR POWER DIODES [J]. THIN SOLID FILMS, 1976, 36 (02) : 479 - 482

[2] AOKI T, 1975, EL SOC EXT ABST, V75, P352

[3] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) : 990 - 994

[4] BARRY ML, 1970, CHEMICAL VAPOR DEPOS, P595

[5] BENZING WC, 1975, SOLID STATE TECHNOL, V18, P39

[6] BENZING WC, 1973, SOLID STATE TECHNOL, V16, P37

[7] BERMAN AH, 1976, SOLID STATE TECHNOL, V19, P29

[8] CHARACTERISTICS OF DOPED OXIDES AND THEIR USE IN SILICON DEVICE FABRICATION [J]. JOURNAL OF CRYSTAL GROWTH, 1972, 17 (DEC) : 276 - +

[9] BURT DL, 1976, Patent No. 3934060

[10] CHRISTOU A, 1977, 15TH P ANN REL PHYS