ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS

被引：182

作者：

KERN, W

ROSLER, RS

机构：

[1] RCA LABS, PRINCETON, NJ 08540 USA

[2] APPL MAT INC, SANTA CLARA, CA 95051 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1977年 / 14卷 / 05期

关键词：

D O I：

10.1116/1.569340

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1082 / 1099

页数：18

共 109 条

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[2]

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[4]

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[5]

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[6]

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[7]

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[8] CHARACTERISTICS OF DOPED OXIDES AND THEIR USE IN SILICON DEVICE FABRICATION [J].

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[9]

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[10]

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