A New Analytical Model of Subthreshold Swing for Cylindrical Gate (CG) Mosfets Including Effective Conducting Path (ECP)

被引:0
作者
Aouaj, Abdellah [1 ]
机构
[1] Fac Sci & Tech, Dept Genie Elect, BP 523, Beni Mellal, Morocco
来源
JOURNAL OF ACTIVE AND PASSIVE ELECTRONIC DEVICES | 2010年 / 5卷 / 1-2期
关键词
Cylindrical gate MOSFETs; Subthreshold swing; Effective conducting path (EPC);
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed analytical model for subthreshold swing of cylindrical gate MOSFETs using analytical solution of 2D Poisson's equation and evanescent mode analysis. To account doping effect in subthreshold swing an effective conducting path R-eff is introduced in this model. The parameter R-eff presents the location of S-weighted of subthreshold conduction. By comparison with different published results, the conventional model shows an overestimation of subthreshold swing while our model reveals quantitative agreement.
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页码:153 / 161
页数:9
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