ELECTRICAL-PROPERTIES OF THERMAL OXIDE GROWN USING DRY OXIDATION ON P-TYPE 6H-SILICON CARBIDE

被引：41

作者：

ALOK, D

MCLARTY, PK

BALIGA, BJ

机构：

[1] Power Semiconductor Research Center, North Carolina State University, Raleigh

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 17期

关键词：

D O I：

10.1063/1.112753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of thermal oxides grown on p-type 6H-silicon carbide were investigated during this work. Thermal oxides were grown on 7x10(15) cm(-3) aluminum doped p-type 6H-silicon carbide at 1275 degrees C in a dry oxygen ambient. Capacitance-voltage measurement indicated the presence of a large positive charge in the oxide. The interface state density and effective charge density for these oxides was estimated to be 1x10(11) cm(-2) eV(-1) and 8X10(12) cm(-2) respectively. Bias temperature stress measurement showed the presence of negative bias stress instability and slow trapping. (C) 1994 American Institute of Physics.

引用

页码：2177 / 2178

页数：2

共 10 条

[1]

ALOK PKD, 1994, APPL PHYS LETT, V64, P2845

[2]

BALK P, 1988, SISIO2 SYSTEM

[3] COMPARISON OF 6H-SIC, 3C-SIC, AND SI FOR POWER DEVICES [J].