TUNNEL BARRIER GROWTH DYNAMICS OF NB/ALOX-AL/NB AND NB/ALNX-AL/NB JOSEPHSON-JUNCTIONS

被引：12

作者：

DOLATA, R ^{[1
]}

NEUHAUS, M ^{[1
]}

JUTZI, W ^{[1
]}

机构：

[1] UNIV KARLSRUHE,INST ELEKTROTECHN GRUNDLAGEN INFORMAT,HERTZSTR 16,D-76187 KARLSRUHE,GERMANY

来源：

PHYSICA C | 1995年 / 241卷 / 1-2期

关键词：

D O I：

10.1016/0921-4534(94)02344-1

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth of very thin aluminum oxide and aluminum nitride tunnel barriers on top of an about 7 nm aluminum layer is deduced by measurements of the reflectivity change of a laser beam due to the decrease of the aluminum laser thickness. Within the first seconds of the process thermal aluminum oxide grows much faster than aluminum nitride in a nitrogen plasma. For both barrier types the reflectivity change can be correlated with the Josephson current density of the finished junctions. In a semi-logarithmic scale the current density versus reflectivity change can be approximated by a straight line up to 20 kA/cm2. High current densities with AlNx seem to be more easily controllable than with AlOx.

引用

页码：25 / 29

页数：5

共 12 条

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