FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(111)-7X7 USING A SCANNING TUNNELING MICROSCOPE (STM)

被引：38

作者：

HUANG, DH ^{[1
]}

UCHIDA, H ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] INST PHYS & CHEM RES, WAKO, SAITAMA 35101, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1992年 / 31卷 / 12B期

关键词：

NANOLITHOGRAPHY; SILICON SURFACES; FIELD EVAPORATION; SCANNING TUNNELING MICROSCOPE;

D O I：

10.1143/JJAP.31.4501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A single Si atom or a group of a few Si atoms can be extracted from a predetermined position of the Si(111)-7 x 7 surface through field evaporation with a scanning tunneling microscope (STM). A method of tip preparation which makes Si atom extraction reliable is presented. The results of many individual Si atom extraction experiments are discussed on the basis of the statistics of extraction with the Si(111)-7 x 7 unit cell.

引用

页码：4501 / 4503

页数：3

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