METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY

Metalorganic compounds are finding an increasing application in the growth of III-V and II-VI semiconductor layers by metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). In the absence of extrinsic trace metal impurities, the molecular structure of the precursor can exert a significant effect on the electrical and optical properties of the semiconductor layer. In addition, gas phase interactions between precursors in metalorganic vapour phase epitaxy, can heavily influence the growth chemistry. In this paper the use of metalorganic compounds in a variety of MOVPE and CBE applications is reviewed with emphasis on precursor chemistry in the gas phase and at the growth surface.