DELAYED RELAXATION BY SURFACTANT ACTION IN HIGHLY STRAINED III-V-SEMICONDUCTOR EPITAXIAL LAYERS - COMMENT

被引：31
作者：
SNYDER, CW
ORR, BG
机构：
[1] Harrison M. Randall Laboratory of Physics, University of Michigan, Ann Arbor
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 07期
关键词：
D O I：
10.1103/PhysRevLett.70.1030
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A Comment on the Letter by N. Grandjean et al., Phys. Rev. Lett. 69, 796 (1992). © 1993 The American Physical Society.
引用
收藏
页码：1030 / 1030
页数：1
相关论文
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