ENERGY-LEVEL DIFFERENCES IN SURFACE QUANTIZATION MEASURED BY PIEZORESISTANCE EFFECT

被引：10

作者：

DORDA, G ^{[1
]}

EISELE, I ^{[1
]}

PREUSS, E ^{[1
]}

机构：

[1] SIEMENS FORSCH LAB,MUNICH,WEST GERMANY

来源：

SOLID STATE COMMUNICATIONS | 1972年 / 11卷 / 12期

关键词：

D O I：

10.1016/0038-1098(72)90757-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1625 / 1628

页数：4

共 11 条

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BALSLEV, I .

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[2] PIEZORESISTANCE IN QUANTIZED CONDUCTION BANDS IN SILICON INVERSION LAYERS [J].

DORDA, G .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) :2053-&

[3]

DORDA G, 1972, 11 P INT C PHYS SEM

[4] TRANSPORT PROPERTIES OF ELECTRONS IN INVERTED SILICON SURFACES [J].

FANG, FF ;

FOWLER, AB .

PHYSICAL REVIEW, 1968, 169 (03) :619-+

[5]

FOWLER AB, 1966, J PHYS SOC JPN, VS 21, P331

[6] SURFACE CHARGES INDUCED BY MECHANICAL STRESSES IN SILICON-SILICON OXIDE INTERFACE [J].

FRIEDRICH, H .

SOLID-STATE ELECTRONICS, 1971, 14 (07) :639-+

[7] QUANTUM-LIMIT PIEZORESISTANCE OF N-TYPE INVERSION LAYERS OF SILICON AND GERMANIUM [J].

ITO, R .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :735-&

[8] OBSERVATION OF MOBILITY ANISOTROPY OF ELECTRONS ON (110) SILICON SURFACES AT LOW-TEMPERATURES [J].

SAH, CT ;

EDWARDS, JR ;

NING, TH .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 10 (01) :153-&

[9] PROPERTIES OF SEMICONDUCTOR SURFACE INVERSION LAYERS IN ELECTRIC QUANTUM LIMIT [J].

STERN, F ;

HOWARD, WE .

PHYSICAL REVIEW, 1967, 163 (03) :816-&

[10]

STERN F, PRIVATE COMMUNICATIO

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