FABRICATION OF DIAMOND FILMS UNDER HIGH-DENSITY HELIUM PLASMA FORMED BY ELECTRON-CYCLOTRON RESONANCE

被引:7
|
作者
YUASA, M
KAWARADA, H
WEI, J
MA, JS
SUZUKI, J
OKADA, S
HIRAKI, A
机构
[1] WASEDA UNIV, SCH SCI & ENGN, DEPT ELECTR COMMUN, TOKYO 169, JAPAN
[2] SHIMADZU CO, DIV IND MACH, KYOTO 615, JAPAN
[3] OSAKA UNIV, FAC ENGN, DEPT ELECT ENGN, SUITA, OSAKA 565, JAPAN
来源
SURFACE & COATINGS TECHNOLOGY | 1991年 / 49卷 / 1-3期
关键词
D O I
10.1016/0257-8972(91)90086-C
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Helium gas has been employed instead of hydrogen as the carrier gas to fabricate diamond films using a magneto-active plasma chemical vapour deposition (CVD) system at low pressures. Helium plasma has a much higher plasma density than hydrogen plasma and it has been shown that this promotes fabrication of good quality diamond films at low pressures. Using a gas mixture of methyl alcohol and helium, microcrystalline diamond films with a grain size smaller than 500 angstrom have been fabricated. These microsized diamond films have been investigated by employing X-ray photoelectron spectroscopy, and features equivalent to those of natural diamond have been obtained.
引用
收藏
页码:374 / 380
页数:7
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