TEM INVESTIGATION OF GA AND IN DOPED ZNS, AND IN DOPED ZNSE

被引：4

作者：

LOGINOV, YY ^{[1
]}

BROWN, PD ^{[1
]}

THOMPSON, N ^{[1
]}

RUSSELL, GJ ^{[1
]}

WOODS, J ^{[1
]}

机构：

[1] UNIV DURHAM,SCH ENGN & APPL SCI,APPL PHYS GRP,DURHAM DH1 3LE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 102卷 / 04期

关键词：

D O I：

10.1016/0022-0248(90)90849-G

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Crystals of In and Ga doped ZnS and In doped ZnSe have been grown from the vapour phase. As-grown and vacuum annealed samples exhibited a well formed defect microstructure consisting of dislocations and stacking faults, whereas samples annealed in a zinc ambient were characterised by precipitates decorating and disrupting the native defect structure, and dislocation loops. © 1990.

引用

页码：827 / 840

页数：14

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