SCHOTTKY BARRIERS AT THE INTERFACE BETWEEN AMORPHOUS SILICON AND ELECTROLYTES

被引：27

作者：

WILLIAMS, R

机构：

[1] RCA Laboratories, Princeton

来源：

JOURNAL OF APPLIED PHYSICS | 1979年 / 50卷 / 04期

关键词：

D O I：

10.1063/1.326198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Schottky barrier forms at the interface between amorphous silicon and an electrolyte. The barrier height, φB, can be estimated from the open-circuit photovoltage. It depends on the potential-determining ion in solution and is a linear function of the redox potential. The magnitude of φB ranged from 1.0 to 1.7 eV for various electrolyte compositions.

引用

页码：2848 / 2851

页数：4

共 13 条

[1] AMORPHOUS SILICON SOLAR-CELL
CARLSON, DE
WRONSKI, CR
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (11) : 671 - 673
[2] AMORPHOUS SILICON SOLAR-CELLS
CARLSON, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453
[3] SEMICONDUCTOR-ELECTROLYTE INTERFACE DEVICES FOR SOLAR-ENERGY CONVERSION
JAYADEVAIAH, TS
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (07) : 399 - 400
[4] LATIMER W, 1956, OXIDATION STATES ELE
[5] AMORPHOUS SILICON P-N-JUNCTION
SPEAR, WE
LECOMBER, PG
KINMOND, S
BRODSKY, MH
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (02) : 105 - 107
[6] Sze SM., 1969, PHYSICS SEMICONDUCTO, P372
[7] ON THE MECHANISM OF CHEMICALLY ETCHING GERMANIUM AND SILICON
TURNER, DR
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (10) : 810 - 816
[8] CHEMISTRY AND ELECTRICAL PROPERTIES OF INTERFACE BETWEEN ZNSE AND AN ELECTROLYTE
WILLIAMS, R
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (11) : 1173 - &
[9] ELECTROCHEMICAL REACTIONS OF SEMICONDUCTORS
WILLIAMS, R
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01): : 12 - 18
[10] AMORPHOUS SILICON MIS SOLAR-CELLS
WILSON, JIB
MCGILL, J
KINMOND, S
[J]. NATURE, 1978, 272 (5649) : 152 - 153

← 1 2 →