Features of current-voltage characteristics inherent to GaP light-emitting diodes with quantum wells

被引：0

作者：

Konoreva, O. ^{[1
]}

Opilat, V. ^{[2
]}

Pinkovska, M. ^{[1
]}

Tartachnyk, V. ^{[1
]}

机构：

[1] NAS Ukraine, Inst Nucl Res, 47 Prospect Nauky, UA-03028 Kiev, Ukraine

[2] Drahomanov Natl Pedag Univ, UA-01601 Kiev, Ukraine

来源：

SEMICONDUCTOR PHYSICS QUANTUM ELECTRONICS & OPTOELECTRONICS | 2006年 / 9卷 / 04期

关键词：

GaP; current-voltage characteristics; irregularities; complex traps; quantum wells; conductivity relaxation;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

In this work, GaP p-n junctions used in light-diode manufacturing were studied using the electrophysical methods at various temperatures. Current-voltage characteristics of some diodes, controlled by PC and measured in the voltage and current generator modes with various steps, have shown irregularities in the regions of negative differential resistance and specific before-breakdown part. Long-lasting relaxation of conductivity of GaP crystal with nonuniformity of defect distribution was observed. From analysis of current-flow mechanisms, it was proposed that atypical GaP light-diode electrical characteristics degradation is caused by complex traps shaped as quantum wells in the p-n junction.

引用

页码：45 / 48

页数：4

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