INFLUENCE OF RAPID THERMAL ANNEALING TEMPERATURE ON THE ELECTRICAL-PROPERTIES OF BE-IMPLANTED GAAS P-N-JUNCTIONS

被引：1

作者：

DELYON, TJ

CASEY, HC

MASSOUD, HZ

TIMMONS, ML

HUTCHBY, JA

DIETRICH, HB

机构：

[1] RES TRIANGLE INST,RES TRIANGLE PK,NC 27709

[2] USN,RES LAB,WASHINGTON,DC 20375

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 26期

关键词：

D O I：

10.1063/1.99544

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2244 / 2246

页数：3

共 8 条

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PEARTON, SJ ;

VELLACOLEIRO, GP .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (01) :163-168

[2] DOMINANCE OF SURFACE RECOMBINATION CURRENT IN PLANAR, BE-IMPLANTED GAAS P-N-JUNCTIONS PREPARED BY RAPID THERMAL ANNEALING [J].

DELYON, TJ ;

CASEY, HC ;

TIMMONS, ML ;

HUTCHBY, JA ;

DIETRICH, DH .

APPLIED PHYSICS LETTERS, 1987, 50 (26) :1903-1905

[3] INITIAL DECOMPOSITION OF GAAS DURING RAPID THERMAL ANNEALING [J].

HAYNES, TE ;

CHU, WK ;

ASELAGE, TL ;

PICRAUX, ST .

APPLIED PHYSICS LETTERS, 1986, 49 (11) :666-668

[4] EFFECT OF SURFACE RECOMBINATION ON CURRENT IN ALXGA1-XAS HETEROJUNCTIONS [J].

HENRY, CH ;

LOGAN, RA ;

MERRITT, FR .

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[5]

KUZUHARA M, 1987, MATER RES SOC S P, V92, P401

[6] ELECTRICAL PROFILING AND OPTICAL ACTIVATION STUDIES OF BE-IMPLANTED GAAS [J].

MCLEVIGE, WV ;

HELIX, MJ ;

VAIDYANATHAN, KV ;

STREETMAN, BG .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3342-3346

[7] RELATIONSHIP BETWEEN SECONDARY DEFECTS AND ELECTRICAL ACTIVATION IN ION-IMPLANTED, RAPIDLY ANNEALED GAAS [J].

PEARTON, SJ ;

HULL, R ;

JACOBSON, DC ;

POATE, JM ;

WILLIAMS, JS .

APPLIED PHYSICS LETTERS, 1986, 48 (01) :38-40

[8]

SEIDEL TE, 1985, MATERIALS RES SOC P, V35, P329

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