PHONON ASSIGNMENTS IN II-VI AND III-V SEMICONDUCTOR COMPOUNDS HAVING ZINCBLENDE-TYPE STRUCTURE

被引:13
|
作者
RAM, RK
KUSHWAHA, SS
SHUKLA, A
机构
[1] BANARAS HINDU UNIV,DEPT PHYS,VARANASI 221005,UTTAR PRADESH,INDIA
[2] VIKRAMAJIT SINGH SANATAN DHARMA COLL,KANPUR,INDIA
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 154卷 / 02期
关键词
D O I
10.1002/pssb.2221540215
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:553 / 564
页数:12
相关论文
共 50 条
  • [41] Reflection electron microscopy of molecular beam epitaxial II-VI and III-V semiconductor surfaces
    vonHoegen, MH
    EUROPEAN JOURNAL OF CELL BIOLOGY, 1997, 74 : 51 - 51
  • [42] Shift of the photoemission threshold in III-V and II-VI semiconductors
    Karpushin, A. A.
    Sorokin, A. N.
    JETP LETTERS, 2014, 99 (06) : 329 - 332
  • [43] Transitivity of the band offsets in II-VI/III-V heterojunctions
    Rubini, S
    Milocco, E
    Sorba, L
    Franciosi, A
    JOURNAL OF CRYSTAL GROWTH, 1998, 184 : 178 - 182
  • [44] Growth of II-VI/III-V heterovalent quantum structures
    Lassise, Maxwell B.
    Wang, Peng
    Tracy, Brian D.
    Chen, Guopeng
    Smith, David J.
    Zhang, Yong-Hang
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018, 36 (02):
  • [45] II-VI/III-V HETEROINTERFACES - EPILAYER ON EPILAYER STRUCTURES
    GUNSHOR, RL
    KOLODZIEJSKI, LA
    OTSUKA, N
    NURMIKKO, AV
    MELLOCH, MR
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (08) : C380 - C380
  • [46] Controlling the interface between II-VI and III-V semiconductors
    Zahn, Dietrich R.T.
    Advanced Materials for Optics and Electronics, 1994, 3 (1-6): : 3 - 9
  • [47] Kinetics of II-VI and III-V colloidal semiconductor nanocrystal growth: "Focusing" of size distributions
    Peng, XG
    Wickham, J
    Alivisatos, AP
    JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1998, 120 (21) : 5343 - 5344
  • [48] LATERAL PIEZOELECTRIC FIELDS - A UNIVERSAL FEATURE OF STRAINED III-V AND II-VI SEMICONDUCTOR HETEROSTRUCTURES
    ILG, M
    HEBERLE, A
    PLOOG, KH
    SOLID-STATE ELECTRONICS, 1994, 37 (4-6) : 739 - 742
  • [49] Femtosecond photoelectron spectroscopy of II-VI and III-V semiconductors
    Leblans, M
    Thoma, RKR
    LoPresti, JL
    Reichling, M
    Williams, RT
    OPTICAL INORGANIC DIELECTRIC MATERIALS AND DEVICES, 1997, 2967 : 2 - 9
  • [50] PSEUDOPOTENTIAL CALCULATION OF TRANSVERSE EFFECTIVE CHARGES FOR III-V AND II-VI COMPOUNDS OF ZINC-BLENDE STRUCTURE
    BENNETT, BI
    MARADUDIN, AA
    PHYSICAL REVIEW B-SOLID STATE, 1972, 5 (10): : 4146 - +