KINETICS OF INDUCTION PERIOD FOR NUCLEATION OF SILICON ON SI(111) SUBSTRATES AT U-H-V

被引：15
作者：
BENNETT, RJ
GALE, RW
机构：
来源：
PHILOSOPHICAL MAGAZINE | 1970年 / 22卷 / 175期
关键词：
D O I：
10.1080/14786437008228158
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：135 / &
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