ATOMIC LAYER EPITAXY OF DEVICE QUALITY GAAS

被引：22

作者：

COLAS, E ^{[1
]}

BHAT, R ^{[1
]}

SKROMME, BJ ^{[1
]}

NIHOUS, GC ^{[1
]}

机构：

[1] PACIFIC INT CTR HIGH TECHNOL RES,HONOLULU,HI 96826

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 26期

关键词：

D O I：

10.1063/1.101949

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2769 / 2771

页数：3

共 15 条

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[3]

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[6]

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[9] ATOMIC LAYER EPITAXY OF GAAS USING TRIETHYLGALLIUM AND ARSINE [J].

OHNO, H ;

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APPLIED PHYSICS LETTERS, 1989, 54 (20) :2000-2002

[10] NEW APPROACH TO THE ATOMIC LAYER EPITAXY OF GAAS USING A FAST GAS-STREAM [J].

OZEKI, M ;

MOCHIZUKI, K ;

OHTSUKA, N ;

KODAMA, K .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1509-1511

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