MAGNETODIODE EFFECT WITH APPLICATION TO HIGH SENSITIVE MAGNETIC DEVICES

被引:0
作者
CRISTOLOVEANU, S
机构
来源
ONDE ELECTRIQUE | 1979年 / 59卷 / 05期
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:68 / 74
页数:7
相关论文
共 50 条
[11]   Magnetodiode equivalent circuits for simulation of magnetic field sensors [J].
Hotra, Z ;
Holyaka, R ;
Hladun, M .
OPTOELECTRONIC AND ELECTRONIC SENSORS V, 2002, :333-337
[12]   GAS SENSITIVE FIELD-EFFECT DEVICES FOR HIGH-TEMPERATURES [J].
BARANZAHI, A ;
SPETZ, AL ;
ANDERSSON, B ;
LUNDSTROM, I .
SENSORS AND ACTUATORS B-CHEMICAL, 1995, 26 (1-3) :165-169
[13]   Application of magnetic devices in otiatria [J].
Kuznetsov, AA ;
Yunin, AM ;
Savichev, AA ;
Kuznetsov, OA ;
Dmitriev, NS ;
Palchun, VT .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2001, 225 (1-2) :202-208
[14]   Application of high-performance magnetic nanobeads to biological sensing devices [J].
Yasuaki Kabe ;
Satoshi Sakamoto ;
Mamoru Hatakeyama ;
Yuki Yamaguchi ;
Makoto Suematsu ;
Makoto Itonaga ;
Hiroshi Handa .
Analytical and Bioanalytical Chemistry, 2019, 411 :1825-1837
[15]   Application of high-performance magnetic nanobeads to biological sensing devices [J].
Kabe, Yasuaki ;
Sakamoto, Satoshi ;
Hatakeyama, Mamoru ;
Yamaguchi, Yuki ;
Suematsu, Makoto ;
Itonaga, Makoto ;
Handa, Hiroshi .
ANALYTICAL AND BIOANALYTICAL CHEMISTRY, 2019, 411 (09) :1825-1837
[16]   Application of High Intensity Wet Magnetic Devices for Manganese Concentration. [J].
Dokic, Stevan ;
Bulatovic, Predrag .
Rudarski glasnik, 1984, (03) :18-22
[17]   Intervalley redistribution of electrons at low temperatures and the magnetodiode effect [J].
Abramov, AA ;
Gorbatyi, IN .
SEMICONDUCTORS, 2003, 37 (09) :1053-1056
[18]   Intervalley redistribution of electrons at low temperatures and the magnetodiode effect [J].
A. A. Abramov ;
I. N. Gorbatyi .
Semiconductors, 2003, 37 :1053-1056
[19]   Special features of the magnetodiode effect in multivalley semiconductors at low temperatures [J].
Abramov, AA ;
Gorbatyi, IN .
SEMICONDUCTORS, 2002, 36 (07) :793-799
[20]   AN INTEGRATED SILICON MAGNETIC-FIELD SENSOR USING THE MAGNETODIODE PRINCIPLE [J].
POPOVIC, RS ;
BALTES, HP ;
RUDOLF, F .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (03) :286-291