N-TYPE DOPING OF GALLIUM ANTIMONIDE AND ALUMINUM ANTIMONIDE GROWN BY MOLECULAR-BEAM EPITAXY USING LEAD-TELLURIDE AS A TELLURIUM DOPANT SOURCE

被引：69
作者：
SUBBANNA, S
TUTTLE, G
KROEMER, H
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 04期
关键词：
D O I：
10.1007/BF02652109
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
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页码：297 / 303
页数：7
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