ELECTRICAL BEHAVIOR OF IMPLANTED BISMUTH IN SILICON

被引：12

作者：

MARSH, OJ

BARON, R

SHIFRIN, GA

MAYER, JW

机构：

来源：

APPLIED PHYSICS LETTERS | 1968年 / 13卷 / 06期

关键词：

D O I：

10.1063/1.1652569

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：199 / &

共 10 条

[1]

[Anonymous], 1963, KGL DANSKE VIDENSKAB

[2] RANGE OF ENERGETIC XE125 IONS IN MONOCRYSTALLINE SILICON [J].

DAVIES, JA ;

BROWN, F ;

BALL, GC ;

DOMEIJ, B .

CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) :1070-&

[3]

DAVIES JG, IN PRESS

[4]

ERIKSSON L, IN PRESS

[5] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J].

GIBSON, WM ;

MARTIN, FW ;

STENSGAARD, R ;

JENSEN, FP ;

MEYER, NI ;

GALSTER, G ;

JOHANSEN, A ;

OLSEN, JS .

CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) :675-+

[6] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[7] SOLUBILITY EFFECTS OF IMPLANTED IONS IN SEMICONDUCTORS [J].

MARSH, OJ ;

MAYER, JW ;

SHIFRIN, GA ;

JAMBA, D .

APPLIED PHYSICS LETTERS, 1967, 11 (03) :92-&

[8] ION IMPLANTATION OF SILICON .2. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS [J].

MAYER, JW ;

MARSH, OJ ;

SHIFRIN, GA ;

BARON, R .

CANADIAN JOURNAL OF PHYSICS, 1967, 45 (12) :4073-&

[9] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[10]

VASILEV VK, 1968, FIZ TVERD TELA+, V9, P1503

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