COMPREHENSIVE MODELS FOR ANALYSIS OF HIGH-EFFICIENCY GAAS IMPATTS

被引：13

作者：

BLAKEY, PA ^{[1
]}

CULSHAW, B ^{[1
]}

GIBLIN, RA ^{[1
]}

机构：

[1] UCL, DEPT ELECTR & ELECT ENGN, LONDON WC1E 6BT, ENGLAND

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 06期

关键词：

D O I：

10.1109/T-ED.1978.19153

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：674 / 682

页数：9

共 28 条

[1] DESIGN CRITERIA FOR HI DOPING DENSITY IN HI-LO HIGH-EFFICIENCY IMPATTS [J].

BLAKEY, PA .

ELECTRONICS LETTERS, 1976, 12 (13) :329-330

[2] PROPAGATING AVALANCHE-ZONE MODE FOR HIGH-EFFICIENCY GAAS LO-HI-LO IMPATT STRUCTURES [J].

BLAKEY, PA .

ELECTRONICS LETTERS, 1975, 11 (25-2) :630-631

[3] CRITERION FOR OPTIMUM PUNCH-THROUGH FACTOR OF GALLIUM-ARSENIDE IMPATT DIODES [J].

BLAKEY, PA ;

CULSHAW, B ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1976, 12 (11) :284-286

[4]

BLAKEY PA, 1977, SOLID STATE ELECTRON, V1, P57

[5] SPACE-CHARGE-INDUCED NEGATIVE RESISTANCE IN AVALANCHE DIODES [J].

BOWERS, HC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (06) :343-+

[6] EFFECTS OF TUNNELING ON HIGH-EFFICIENCY IMPATT AVALANCHE-DIODES [J].

CHIVE, M ;

CONSTANT, E ;

LEFEBVRE, M ;

PRIBETICH, J .

PROCEEDINGS OF THE IEEE, 1975, 63 (05) :824-826

[7] EFFECT OF TRANSFERRED-ELECTRON VELOCITY MODULATION IN HIGH-EFFICIENCY GAAS IMPATT DIODES [J].

CONSTANT, E ;

MIRCEA, A ;

PRIBETICH, J ;

FARRAYRE, A .

JOURNAL OF APPLIED PHYSICS, 1975, 46 (09) :3934-3940

[8] INTERVALLEY SCATTERING IN GALLIUM-ARSENIDE AVALANCHE-DIODES [J].

CULSHAW, B ;

BLAKEY, PA .

PROCEEDINGS OF THE IEEE, 1976, 64 (04) :569-571

[9] GRAPHICAL OPTIMIZATION OF DOPING PROFILE OF TRANSIT-TIME DEVICES [J].

CULSHAW, B .

PROCEEDINGS OF THE IEEE, 1975, 63 (02) :321-323

[10] CHARGE-LIMITED DOMAINS IN GALLIUM-ARSENIDE AVALANCHE-DIODES [J].

CULSHAW, B ;

BLAKEY, PA ;

GIBLIN, RA .

ELECTRONICS LETTERS, 1975, 11 (05) :102-104

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