DIFFERENTIAL RESISTANCE OF P-N-JUNCTIONS WITH DEEP LEVELS UNDER AVALANCHE BREAKDOWN CONDITIONS

被引：0

|

作者：

KYUREGYAN, AS

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1987年 / 21卷 / 05期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：574 / 575

页数：2

相关论文

共 50 条

[31] DC CHARACTERISTICS OF SILICON P-N-JUNCTIONS AT AVALANCHE BREAKDOWN INCLUDING SELF-HEATING
STEPOWICZ, WJ
SOLID-STATE ELECTRONICS, 1979, 22 (01) : 7 - 13
[32] IMPACT IONIZATION AND AVALANCHE BREAKDOWN IN P-N-JUNCTIONS SUBJECTED TO AN INHOMOGENEOUS TEMPERATURE-FIELD
DOBROVOLSKII, VN
ROMANOV, AV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1992, 26 (08): : 763 - 765
[33] AVALANCHE BREAKDOWN IN P-N JUNCTIONS
SUNOHARA, Y
REVIEW OF THE ELECTRICAL COMMUNICATIONS LABORATORIES, 1969, 17 (1-2): : 133 - &
[34] HYBRID METHOD FOR DETERMINATION OF PARAMETERS OF DEEP LEVELS IN P-N-JUNCTIONS
SEREZHKIN, YN
AKIMOV, PV
FEDOSEEV, VM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (06): : 641 - 644
[35] SIMULATION OF REVERSE BREAKDOWN IN PLANAR P-N-JUNCTIONS
HUANG, Q
AMARATUNGA, GAJ
NARAYANAN, EMS
MILNE, WI
SOLID-STATE ELECTRONICS, 1991, 34 (09) : 983 - 993
[36] FORMATION OF SECONDARY BREAKDOWN IN GERMANIUM P-N-JUNCTIONS
SHAPOVALOV, VP
RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1971, 16 (10): : 1795 - +
[37] PROBLEM OF THE BREAKDOWN VOLTAGE OF P-N-JUNCTIONS IN SILICON
MASLENNIKOV, NM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1991, 25 (06): : 589 - 591
[38] CALCULATION OF DIFFUSION CURVATURE RELATED AVALANCHE BREAKDOWN IN HIGH-VOLTAGE PLANAR P-N-JUNCTIONS
TEMPLE, VAK
ADLER, MS
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, 22 (10) : 910 - 916
[39] BOUNDARY-CONDITIONS AT P-N-JUNCTIONS
HEASELL, EL
SOLID-STATE ELECTRONICS, 1979, 22 (10) : 853 - 856
[40] DETERMINATION OF THRESHOLD ENERGY AND MEAN FREE PATH OF HOLES UNDER AVALANCHE IONIZATION CONDITIONS IN GERMANIUM P-N-JUNCTIONS
RYABCHENKO, GV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 205 - 207

← 1 2 3 4 5 →