INFLUENCE OF FREE CHARGE CARRIER CONCENTRATION ON ELASTIC CONSTANTS OF GALLIUM ARSENIDE

被引：0

作者：

BOBYLEV, BA

KRAVCHEN.AF

机构：

来源：

SOVIET PHYSICS ACOUSTICS-USSR | 1967年 / 13卷 / 02期

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暂无

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

引用

页码：242 / &

共 12 条

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[3]

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[5]

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KEYES, RW .

[7] EFFECT OF DOPING ON ELASTIC CONSTANTS OF SILICON [J].

CSAVINSZKY, P ;

EINSPRUCH, NG .

PHYSICAL REVIEW, 1963, 132 (06) :2434-&

[8]

EDMOND JT, 1956, P RUGBY C, P109

[9] ELECTRONIC EFFECT IN THE ELASTIC CONSTANT C' OF SILICON [J].

EINSPRUCH, NG ;

CSAVINSZKY, P .

KEYES, RW .